Title :
Monte Carlo characterization of fabricated partially-depleted SOI MOSFETs: high-frequency performance
Author :
Rengel, Raúl ; Martin, María J. ; Pailloncy, Guillaume ; Dambrine, Gilles ; Danneville, Franqois
Author_Institution :
Departamento de Fisica Aplicada, Univ. de Salamanca, Spain
Abstract :
This paper addresses a Monte Carlo (MC) investigation of fabricated partially depleted (PD) silicon-on-insulator (SOI) MOSFETs. Numerical results show a good agreement to the main high-frequency figures of merit of the transistor, providing at the same time an advanced understanding of the electronic charge transport processes by means of the main internal quantities of interest. The excellent performance of the devices investigated (with NF min of 0.4 dB at 6 GHz) makes them feasible candidates to be used in RF and microwave analog applications.
Keywords :
MOSFET; Monte Carlo methods; high-frequency effects; semiconductor device models; silicon-on-insulator; transport processes; 0.4 dB; 6 GHz; Monte Carlo characterization; electronic charge transport; figures of merit; high frequency performance; partially depleted SOI MOSFET; silicon on insulator; Acoustic noise; Insulation; Isolation technology; MOSFETs; Microwave transistors; Monte Carlo methods; Noise measurement; Radio frequency; Silicon on insulator technology; Topology;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504408
