• DocumentCode
    1933147
  • Title

    On the Investigation of Degradation Mechanisms in Ultra-High Performance Gaas Heterojunction Bipolar Transistors

  • Author

    Yang-Hua Chang ; Li, G.P. ; Oki, A.K. ; Streit, D. ; Hafizi, M.E. ; Kim, M.E.

  • Author_Institution
    Department of Electrical and Computer Engineering, University of California
  • fYear
    1991
  • fDate
    17-19 June 1991
  • Keywords
    Bipolar transistors; Current measurement; Degradation; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Space technology; Stress; Temperature measurement; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1991. 49th Annual
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-87942-647-0
  • Type

    conf

  • DOI
    10.1109/DRC.1991.664724
  • Filename
    664724
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933147