Title :
Frequency performances of MOS compatible silicon permeable base transistors and comparison with simulation results
Author :
Mouis, M. ; Letourneau, P. ; Vincent, G.
Author_Institution :
Institut d´´Electronique Fondamentale, CNRS URA 22, F91405 Orsay Cedex, France.
Abstract :
Permeable Base Transistors (PBTs) with gate periodicity down to 0.6 ¿m have been fabricated using a MOS technology process. Both static and microwave measurements have been performed. The results obtained on the smallest structures are presented and compared with two-dimensional simulations.
Keywords :
Capacitance measurement; Frequency measurement; MOSFETs; Microwave measurements; Microwave technology; Performance evaluation; Plasma simulation; Platinum; Silicon; Tungsten;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
