Title :
Microwave HBT fabrication by using a self-aligned technology with a perpendicular side-wall
Author :
Chen, Xiaojian ; Wu, Ymg
Author_Institution :
Nanjing Electronic Devices Institute, P.O. Box 1601, Nanjing, PRC
Abstract :
A HBT self-aligned technology with a perpendicular side-wall mesa has been adopted in microwave HBT fabrication by virtue of a high selectivity chemical wet etchant. Principal features and technological processes of the method are discussed. The gap of ~0.1¿m between the emitter mesa edge and base contact metallization edge has been formed repeatedly by the method. The experimental results of the developed microwave HBT for test purpose is given.
Keywords :
Chemical technology; Contact resistance; Dielectric films; Fabrication; Frequency; Heterojunction bipolar transistors; Metallization; Microwave devices; Microwave technology; Microwave theory and techniques;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
