High quality pseudomorphic InGaAs/GaAs HFET structures grown by MBE

The growth of modulation-doped heterojunction-field effect transistor structures with a pseudomorphic InGaAs quantum well for high frequency device applications is reported. The In-concentrations are varied between 10% and 30%. The quantum well widths range from 8 nm to 16 nm. Depending on the sheet concentration one or two strong photoluminescence transitions with a high-energy cutoff are observed from the two-dimensional electron gas in the InGaAs channel. The transition energies shift to lower energies with higher In-concentration and/or larger quantum well width.