Title :
A high speed frequency divider in 0.18μm CMOS for wireless sensor networks
Author :
Fan Xiangning ; Li Bin ; Du Yanqiang ; Wang Yujie ; Yu Lu
Author_Institution :
Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China
Abstract :
This paper presents a 1V low-voltage high speed frequency divider-by-2 which is fabricated in a standard 0.18μm TSMC RF CMOS process. Employing parallel current switching topology, the 2:1 frequency divider operates up to 6.5GHz while consuming 4.64mA current with test buffers at a supply voltage of 1V, and the chip area of the core circuit is 0.065×0.055mm2.
Keywords :
CMOS integrated circuits; frequency dividers; wireless sensor networks; TSMC RF CMOS process; core circuit; current 4.64 mA; high speed frequency divider; low-voltage high speed frequency divider-by-2; parallel current switching topology; size 0.18 mum; voltage 1 V; wireless sensor networks; CMOS integrated circuits; Clocks; Frequency conversion; Latches; Oscillators; Topology; Transistors; CMOS; frequency divider; high speed; low-voltage;
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4673-0901-1
Electronic_ISBN :
978-1-4673-0903-5
DOI :
10.1109/IMWS2.2012.6338170
