SPICE BSIMSOI enhancement to account for velocity overshoot effects

Author

Roldán, A. ; Roldán, J.B. ; Gámiz, F.

Author_Institution

Dept. de Electronica y Tecnologia de Computadores, Univ. de Granada, Spain

fYear

2005

fDate

2-4 Feb. 2005

Firstpage

401

Lastpage

404

Abstract

The authors have improved the SPICE BSIMSOI model to account for velocity overshoot (VO) effects in single gate SOI MOSFETs. A new velocity overshoot parameter (λ_VO) and an extraction method was introduced to obtain it that can be incorporated to the standard parameter extraction procedure of the BSIMSOI model. The transconductance curves needed to perform the extraction process have been obtained by means of an ensemble Monte Carlo simulator. A 51 stage oscillator ring and the influence of VO effects on the oscillation frequency have been studied. It has been shown that the oscillation frequency rises as VO effects increases, a quantitative relationship has been depicted.

Keywords

MOSFET; Monte Carlo methods; SPICE; parameter estimation; semiconductor device models; silicon-on-insulator; Monte Carlo; SPICE BSIMSOI enhancement; oscillation frequency; parameter extraction; single gate SOI MOSFET; transconductance curve; velocity overshoot effects; Circuit simulation; Context modeling; Frequency; Integrated circuit modeling; MOSFETs; Monte Carlo methods; SPICE; Scattering; Silicon on insulator technology; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2005 Spanish Conference on

Conference_Location

Tarragona

Print_ISBN

0-7803-8810-0

Type

conf

DOI

10.1109/SCED.2005.1504415

Filename

1504415