DocumentCode
1933351
Title
History, Present Trends, and Scaling of Silicon Bipolar Technology
Author
Ning, Tak H.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
277
Lastpage
281
Abstract
Recent advances in bipolar technology are reviewed. The Key features of the advanced bipolar devices are identified and the trends for future developmemt discussed. The scaling of high-speed circuits and the properties of the scaled devices are also reviewed.
Keywords
CMOS technology; Circuits; Delay; Helium; History; Isolation technology; Parasitic capacitance; Silicon; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436394
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