Title :
History, Present Trends, and Scaling of Silicon Bipolar Technology
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA
Abstract :
Recent advances in bipolar technology are reviewed. The Key features of the advanced bipolar devices are identified and the trends for future developmemt discussed. The scaling of high-speed circuits and the properties of the scaled devices are also reviewed.
Keywords :
CMOS technology; Circuits; Delay; Helium; History; Isolation technology; Parasitic capacitance; Silicon; Very large scale integration; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
