Title :
Double gate MOSFET compact model including scattering
Author :
Hamid, Hamdy A. ; Iñíguez, B. ; Jiménez, D. ; Marsal, L.F. ; Pallarès, J.
Author_Institution :
Dept. d´´Enginyeria Electronica, Univ. Rovira i Virgili, Tarragona, Spain
Abstract :
This work presents a compact model, which includes scattering, for the silicon quantum well MOSFET. The model is based on the Landauer transmission theory and McKelvey´s flux theory, and is continuous from below to above threshold and from linear to saturation regions. A good agreement with 2-D numerical simulations (nanoMOS) is obtained with the compact model. The effect of backscattering on both the channel conductance and the average velocity near the source end is studied in this work.
Keywords :
MOSFET; ballistic transport; electron backscattering; numerical analysis; quantum well devices; semiconductor device models; semiconductor quantum wells; 2D numerical simulations; Landauer transmission theory; McKelvey flux theory; average velocity; backscattering; channel conductance; double gate MOSFET; quantum well MOSFET; scattering; Backscatter; CMOS technology; Electrons; MOSFET circuits; Nanoscale devices; Numerical simulation; Particle scattering; Scalability; Semiconductor device modeling; Silicon;
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
DOI :
10.1109/SCED.2005.1504418
