Title :
Properties of recombination radiation in CdIn2S2 Se2 single crystals
Author :
Machuga, A.I. ; Arama, E.D. ; Jitar, V.F. ; Shemyakova, T.D.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Chisinau, Moldova
Abstract :
Recombination characteristics of CdIn2S2Se 2 single crystals have been investigated. The cathodoluminescence spectra show an intensive band with maximum at 1.28 eV (293K). The photoconductivity spectra exhibit the temperature quenching of exponential character. The donor level at 1.55 eV and acceptor level at 0.13 eV have been found out. The interpretation of results is given in comparison with the isomorphous analog ZnIn2 S4(III)
Keywords :
cadmium compounds; cathodoluminescence; electron-hole recombination; impurity states; indium compounds; photoconductivity; ternary semiconductors; CdIn2S2Se2; CdIn2S2Se2 single crystals; acceptor level; cathodoluminescence spectra; donor level; exponential character; isomorphous analog; photoconductivity spectra; recombination radiation properties; temperature quenching; Crystallization; Crystals; Frequency measurement; Lattices; Lighting; Photoconductivity; Radiative recombination; Semiconductor materials; Steady-state; Temperature;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967468
