DocumentCode
1933496
Title
Contact-related effects on junction behaviour
Author
Polignano, M.L. ; Circelli, N.
Author_Institution
SGS-Thomson Microelectronics, 20041 Agrate MI, Italy
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
81
Lastpage
84
Abstract
The effect of a titanium-titanium nitride (Ti/TiN) barrier metallization on junctions characteristics was studied by comparing diodes of different geometries. An increase of the reverse current of junctions is observed in the presence of contacts when Ti/TiN/Al:Si metallization is used. It has been shown that the reverse current increase is related to contact perimeter, that it is independent of many relevant process steps and it is reduced by thermal treatments after metal deposition.
Keywords
Contacts; Contamination; Diodes; Geometry; Leakage current; Metallization; Microelectronics; Testing; Tin; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436399
Link To Document