Title :
A low power 0.3–3.8 GHz low-noise mixer with noise cancellation
Author :
Changguo Shen ; Zhiqun Li
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
This paper shows a low power low-noise mixer in RFCMOS 0.18μm technology that operates between 0.3-3.8GHz. The low power mixer has a Gilbert cell configuration which employs low-noise transconductors designed using the noise-cancelling technique. And the low-noise amplifier designs use the current-reused topology to reduce power consumption and employ a capacitive cross-coupled (CCC) gm-boosting to improve noise performance. This merged front-end achieves 11~17dB power conversion gain, a flat SSB noise figure of 7.3~11dB with IF 2MHz over the whole working range. It only consumes 1.69mA current from a 1.8V supply and its active area occupies only 0.04mm2.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; MMIC mixers; field effect MMIC; low noise amplifiers; low-power electronics; CCC gm-boosting; Gilbert cell configuration; RF CMOS technology; capacitive cross-coupled gm-boosting; current 1.69 mA; current-reused topology; flat SSB noise figure; frequency 0.3 GHz to 3.8 GHz; frequency 2 MHz; gain 11 dB to 17 dB; low-noise amplifier designs; low-noise transconductors; low-power low-noise mixer; noise figure 7.3 dB to 11 dB; noise-cancelling technique; power consumption reduction; power conversion gain; size 0.18 mum; voltage 1.8 V; Impedance matching; Mixers; Noise cancellation; Power demand; Topology; Wideband;
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4673-0901-1
Electronic_ISBN :
978-1-4673-0903-5
DOI :
10.1109/IMWS2.2012.6338178
