Title :
Scaling technologies for millimeter-wave GaN-HEMTs
Author :
Dai, Yongsheng ; Zhou, Jianjun ; Chen, Jianfeng ; Han, Min
Abstract :
GaN-HEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for GaN-HEMTs and the correct topology derived such that simple scaling rules apply to the unit cell. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fngers and the gate width are derived to optimize the size of the device.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; millimetre wave transistors; wide band gap semiconductors; GaN; gate fngers; gate width; geometrical relationship; linear model; millimeter-wave HEMT; scaling technology; topology; transistor; unit cell; Fingers; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; Scattering parameters; Topology;
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4673-0901-1
Electronic_ISBN :
978-1-4673-0903-5
DOI :
10.1109/IMWS2.2012.6338180
