Common mode EMI noise characterization and improvement for GaN switched-capacitor converter

Author

Kaichien Tsai ; Feng Qi ; Davidson, Ernest ; Longya Xu

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA

fYear

2013

fDate

15-19 Sept. 2013

Firstpage

4159

Lastpage

4165

Abstract

The common mode (CM) noise issues in Gallium Nitride (GaN) based switched-capacitor circuit are investigated. The coupling mechanism due to the high rate of dv/dt in the voltage doubler converter is identified. A circuit model considering the GaN device, PCB stray inductance and parasitic capacitance, and passive components is derived to predict the CM noise generation and propagation. Based on the derived CM noise equivalent circuits, improvements to reduce the CM noise are proposed and verified by both computer simulation and experimental testing.

Keywords

III-V semiconductors; circuit noise; electromagnetic interference; equivalent circuits; gallium compounds; interference suppression; power convertors; switched capacitor networks; voltage multipliers; wide band gap semiconductors; CM noise equivalent circuits; CM noise generation; GaN; PCB stray inductance; circuit model; common mode EMI noise characterization; computer simulation; coupling mechanism; parasitic capacitance; passive components; switched-capacitor converter; voltage doubler converter; Capacitors; Equivalent circuits; Gallium nitride; Impedance; Inductance; Integrated circuit modeling; Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2013 IEEE

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/ECCE.2013.6647254

Filename

6647254