• DocumentCode
    1933584
  • Title

    Study of the conductivity in MIS structures with sol-gel TiO2 dielectric films

  • Author

    Simeonov, S. ; Kafedjiiska, E. ; Szekeres, A. ; Parlog, C. ; Gartner, M.

  • Author_Institution
    Inst. of Solid State Phys., Sofia, Bulgaria
  • Volume
    2
  • fYear
    2001
  • fDate
    37165
  • Firstpage
    307
  • Abstract
    The conductivity in sol-gel TiO2 films deposited on n-Si was characterized by current-voltage measurements in a wide temperature range of 88-291 K. The results suggest that the conduction mechanism is the transport of electrons from the residual donors through the conduction band of TiO2
  • Keywords
    MIS structures; dielectric thin films; electrical conductivity; sol-gel processing; titanium compounds; 88 to 291 K; MIS structures; Si; TiO2; conduction band; conduction mechanism; conductivity; current-voltage measurements; n-Si; residual donors; sol-gel TiO2 dielectric films; transport of electrons; Capacitance; Capacitance-voltage characteristics; Conductivity; Dielectric films; Dielectric substrates; Dielectric thin films; Electrons; Semiconductor films; Silicon; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2001. CAS 2001 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-6666-2
  • Type

    conf

  • DOI
    10.1109/SMICND.2001.967471
  • Filename
    967471
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933584