Title :
Study of the conductivity in MIS structures with sol-gel TiO2 dielectric films
Author :
Simeonov, S. ; Kafedjiiska, E. ; Szekeres, A. ; Parlog, C. ; Gartner, M.
Author_Institution :
Inst. of Solid State Phys., Sofia, Bulgaria
Abstract :
The conductivity in sol-gel TiO2 films deposited on n-Si was characterized by current-voltage measurements in a wide temperature range of 88-291 K. The results suggest that the conduction mechanism is the transport of electrons from the residual donors through the conduction band of TiO2
Keywords :
MIS structures; dielectric thin films; electrical conductivity; sol-gel processing; titanium compounds; 88 to 291 K; MIS structures; Si; TiO2; conduction band; conduction mechanism; conductivity; current-voltage measurements; n-Si; residual donors; sol-gel TiO2 dielectric films; transport of electrons; Capacitance; Capacitance-voltage characteristics; Conductivity; Dielectric films; Dielectric substrates; Dielectric thin films; Electrons; Semiconductor films; Silicon; Temperature distribution;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967471
