• DocumentCode
    1933594
  • Title

    A novel compact model description of reverse-biased diode characteristics including tunnelling

  • Author

    Hurkx, Godefridus Adrianus Maria ; de Graaff, H.C. ; Kloosterman, W.J. ; Knuvers, M.P.G.

  • Author_Institution
    Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    A new compact model description of reverse-biased diode characteristics is presented. This model includes tunnelling effects and avalanche breakdown. From comparison with both numerical simulations and measurements it is found that the model gives a good description of the I-V characteristics of reverse-biased diodes.
  • Keywords
    AC generators; Avalanche breakdown; Character generation; Circuit simulation; Current density; Diodes; Electric breakdown; Numerical simulation; Semiconductor process modeling; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933594