Title :
A novel compact model description of reverse-biased diode characteristics including tunnelling
Author :
Hurkx, Godefridus Adrianus Maria ; de Graaff, H.C. ; Kloosterman, W.J. ; Knuvers, M.P.G.
Author_Institution :
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
Abstract :
A new compact model description of reverse-biased diode characteristics is presented. This model includes tunnelling effects and avalanche breakdown. From comparison with both numerical simulations and measurements it is found that the model gives a good description of the I-V characteristics of reverse-biased diodes.
Keywords :
AC generators; Avalanche breakdown; Character generation; Circuit simulation; Current density; Diodes; Electric breakdown; Numerical simulation; Semiconductor process modeling; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
