• DocumentCode
    1933629
  • Title

    Formation of a double electric layer at the ZnmIn2 Sm+3 (m=1,2,3) - H2O(S2-/S2 2-) interface

  • Author

    Tsiulyanu, I. ; Simashkevich, A. ; Sprinchean, Ala

  • Author_Institution
    Inst. of Appl. Phys., Kishinau, Moldova
  • Volume
    2
  • fYear
    2001
  • fDate
    37165
  • Firstpage
    315
  • Abstract
    The attempt to explain the mechanism of electric double layer formation at electrolyte H2O(S2-/S22-) interface with a photoelectrode based on ternary semiconductor compounds ZnIn2 S4 is the purpose of this work. The space charge layer in the semiconductor having thickness LD=10-3 cm and electrostatic field value at the electrolyte/semiconductor interface E≈104 V/cm was calculated
  • Keywords
    electrochemical electrodes; indium compounds; interface states; photoelectrochemistry; semiconductor-electrolyte boundaries; space charge; ternary semiconductors; thermally stimulated currents; water; zinc compounds; H2O; ZnIn2S4; double electric layer formation; electrolyte/semiconductor interface; electrostatic field value; mechanism; photoelectrode; space charge layer; ternary semiconductor compounds; Absorption; Electrons; Electrostatics; Energy capture; Energy states; Physics; Semiconductor materials; Space charge; Thermal conductivity; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2001. CAS 2001 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-6666-2
  • Type

    conf

  • DOI
    10.1109/SMICND.2001.967473
  • Filename
    967473
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933629