Title :
Formation of a double electric layer at the ZnmIn2 Sm+3 (m=1,2,3) - H2O(S2-/S2 2-) interface
Author :
Tsiulyanu, I. ; Simashkevich, A. ; Sprinchean, Ala
Author_Institution :
Inst. of Appl. Phys., Kishinau, Moldova
Abstract :
The attempt to explain the mechanism of electric double layer formation at electrolyte H2O(S2-/S22-) interface with a photoelectrode based on ternary semiconductor compounds ZnIn2 S4 is the purpose of this work. The space charge layer in the semiconductor having thickness LD=10-3 cm and electrostatic field value at the electrolyte/semiconductor interface E≈104 V/cm was calculated
Keywords :
electrochemical electrodes; indium compounds; interface states; photoelectrochemistry; semiconductor-electrolyte boundaries; space charge; ternary semiconductors; thermally stimulated currents; water; zinc compounds; H2O; ZnIn2S4; double electric layer formation; electrolyte/semiconductor interface; electrostatic field value; mechanism; photoelectrode; space charge layer; ternary semiconductor compounds; Absorption; Electrons; Electrostatics; Energy capture; Energy states; Physics; Semiconductor materials; Space charge; Thermal conductivity; Zinc;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967473
