Current-voltage characteristics of electron irradiated polycrystalline Au/CdSe/Au thin layers

Polycrystalline thin CdSe layers, obtained by thermal-vacuum deposition on glass substrate at temperature of 220°C, were subjected to two consecutive sessions of irradiation with 7 MeV electrons to fluences of 2 × 10¹⁵ and 4 × 10¹⁵ electrons/cm², respectively. After irradiation, the electrical properties of polycrystalline thin CdSe films, sandwiched between two gold electrodes, were investigated by current voltage measurements. Under low-voltages, Ohm´s law is followed with an electron mobility μ of 52 cm²V^-1 s^-1 and a room temperature electrical conductivity σ ₀ of 4,627 × 10^-5 Ω^-1 cm ^-1. At high-applied voltages, there is a space-charge limited conductivity (SCLC) controlled by an uniform trap distribution with density per unit energy range ρ(E) of 2.39 × 10¹⁴ cm^-3 eV^-1