Title :
A permeable base transistor on Si(100) with implanted COSi2-gate
Author :
Schuppen, A. ; Mantl, S ; Vescan, L. ; Lüth, H.
Author_Institution :
Institut fÿr Schicht- und Ionentechnik (ISI), Forschungszentrum Jÿlich, P.O. Box 1913, D-5170 Jÿlich, FRG
Abstract :
A permeable base transistor (PBT) has been fabricated by local implantation of 59Co into Si(100) with subsequent rapid thermal annealing and epitaxial growth of silicon by LPVPE. Transmission electron microscopy shows abrupt interfaces between the buried CoSi2 and the adjacent silicon. Rutherford backscattering and channeling experiments with a minimum yield of 5.3% for the Co signal as well as a specific resistance of 13 ¿ohmcm of the CoSi2 layers demonstrate the good quality of the Si/CoSi2/Si heterostructure. Si/CoSi2 Schottky diodes revealed ideality factors of 1.01, while PBTs with 1.5 ¿m gratings exhibited a maximum transconductance of 11mS/mm.
Keywords :
Dry etching; Epitaxial growth; Fabrication; Gratings; Lithography; Metallization; Molecular beam epitaxial growth; Rapid thermal annealing; Silicon; Wet etching;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
