A Magnetic Field Sensor using a Graded Gate Potential

Conventional, split-drain MAGFETs have a relatively low sensitivity. The low sensitivity can be attributed to properties inherent to the traditional FET structure. A novel device structure, designed to overcome these shortcomings, is presented. In this device the gate voltage varies linearly along the gate. Measured sensitivities for both dual-drain and triple-drain devices are reported. The performance of the device is superior to that of the conventional MAGFET devices.