DocumentCode :
1933753
Title :
A fully integrated LNA for COMPASS receiver in SiGe-BiCMOS technology
Author :
Jin Li ; Wenyuan Li
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
fYear :
2012
fDate :
18-20 Sept. 2012
Firstpage :
1
Lastpage :
4
Abstract :
A novel low-noise amplifier (LNA) designed for COMPASS receiver is proposed in this paper. Inductively degenerated technique and resistive feedback technique are utilized to decrease the noise figure. It not only lowers the noise figure, but also decreases the area of the chip. SiGe-BiCMOS process is used to design this LNA. With a supply voltage of 1.8V, the proposed LNA achieves an NF of 1.17 dB with good S parameters.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; S-parameters; feedback; low noise amplifiers; radio receivers; semiconductor materials; BiCMOS technology; COMPASS receiver; S-parameters; SiGe; inductively degenerated technique; integrated LNA; low-noise amplifier; noise figure; noise figure 1.17 dB; resistive feedback technique; voltage 1.8 V; Impedance; Impedance matching; Noise; Noise figure; Radio frequency; Transistors; LNA; SiGe-BiCMOS; inductively degenerated; resistive feedback;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4673-0901-1
Electronic_ISBN :
978-1-4673-0903-5
Type :
conf
DOI :
10.1109/IMWS2.2012.6338189
Filename :
6338189
Link To Document :
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