DocumentCode
1933755
Title
A parametric investigation of the reactive ion etching of InP in CH4 /H2 plasmas using response surface methodology
Author
Thomas, D J ; Clements, S J
Author_Institution
STC Technology Ltd, London Road, Harlow, Essex, CM17 9NA
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
121
Lastpage
124
Abstract
Response surface methodology (RSM) is applied to study the reactive ion etching (RIE) of InP in CH4 /H2 plasmas. Mechanistic information is inferred through careful interpretation of the contour plots derived from RSM. The data enable the process conditions required for specific device applications to be successfully selected.
Keywords
Etching; Indium phosphide; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Polymers; Power measurement; Response surface methodology; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436411
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