• DocumentCode
    1933794
  • Title

    Surface characteristics of plasma treated WNx/GaAs contacts from C-V measurements

  • Author

    Bagnoli, P.E. ; Paccagnella, A. ; Callegari, A. ; Fantini, F.

  • Author_Institution
    Istituto di Elettronica e Telecomunicazioni, University of Pisa, Pisa, Italy
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    113
  • Lastpage
    116
  • Abstract
    The density and the average penetration depth of acceptors near the semiconductor surface were calculated from C-V and J-V measurements on p+/n Shannon structures. The WNX / GaAs diodes were fabricated using chemically and plasma cleaned GaAs surfaces and annealed at several temperatures. It was found that the semiconductor surface cleaning before metal deposition is a key factor to control the rectifying properties of this type of metal / semiconductor contact.
  • Keywords
    Capacitance-voltage characteristics; Density measurement; Gallium arsenide; Plasma chemistry; Plasma density; Plasma measurements; Plasma properties; Plasma temperature; Surface cleaning; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436413
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933794