DocumentCode :
1933817
Title :
Complementary silicon JFETs using novel ultra-shallow gate junctions
Author :
Grelsson, Ö ; Söderbarg, A. ; Magnusson, U.
Author_Institution :
Uppsala University, Dept. of Technology, P.O. Box 534, S-751 21 Uppsala, Sweden
fYear :
1990
fDate :
10-13 Sept. 1990
Firstpage :
101
Lastpage :
104
Abstract :
Measurements on normally-off type junction field effect transistors (JFET´s) of both n- and p-type for low power applications are presented. A new method, using ultra-shallow gate junctions, when integrating p-and n-type JFET´s to form a complementary JFET (CJFET) structure is proposed and a suitable technology is presented. The ultra-shallow gate junctions used in the devices are formed by low temperature diffusion of boron and antimony in amorphous silicon. Electrical characterisations and SIMS measurements on these ultra-shallow gate junctions are also presented.
Keywords :
Annealing; Electric variables measurement; FETs; JFETs; Power measurement; Semiconductor films; Silicon; Temperature dependence; Thickness measurement; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
Print_ISBN :
0750300655
Type :
conf
Filename :
5436414
Link To Document :
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