Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application

Author

Arssi, N. ; Locatelli, M.L. ; Planson, D. ; Chante, J.P. ; Zorngiebel, V. ; Spahn, E. ; Scharnholz, S.

Author_Institution

INSA, CNRS, Villeurbanne, France

Volume

2

fYear

2001

fDate

37165

Firstpage

341

Abstract

This paper focuses on the study of a 5 kV asymmetrical 4H-SiC thyristor and on its junction edge termination protection. Based on a numerical semiconductor simulator, doping level and thickness of the different layers that constitute the device are proposed. Several techniques of periphery protection such as mesa structure, junction termination extension (JTE) and epitaxial guard rings (EGRs) have been studied. Furthermore, we report on the simulation of the finite element thyristor inserted in a circuit for an electromagnetic launching application

Keywords

electromagnetic launchers; finite element analysis; protection; pulsed power technology; semiconductor device breakdown; semiconductor device models; silicon compounds; thyristor applications; thyristors; wide band gap semiconductors; 5 kV; SiC; asymmetrical 4H-SiC thyristor; doping level; electromagnetic launching; epitaxial guard rings; finite element thyristor; high power pulse application; ideal breakdown voltage; junction edge termination protection; layer thickness; mesa structure; numerical semiconductor simulator; numerical simulation; Circuit simulation; Finite element methods; Impact ionization; Numerical simulation; Photonic band gap; Predictive models; Protection; Silicon carbide; Thermal conductivity; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967479

Filename

967479