Title :
UV detection properties of epitaxial 6H-SiC diodes with oxide ramp termination
Author :
Brezeanu, G. ; Badila, M. ; Godignon, P. ; Millan, J. ; Udrea, F. ; Mihaila, A. ; Amaratunga, G. ; Rebollo, J. ; Enache, I.
Author_Institution :
Univ. Politehnica, Bucharest, Romania
Abstract :
The simple planar edge termination with oxide ramp at the periphery of the contact is extended to SiC pn junction diodes. This paper focuses on the study of the UV detection performances of 6H-SiC Schottky and junction barrier diodes with oxide ramp termination by numerical MEDICI simulation. The devices show a high responsivity and quantum efficiency in the spectral range from 250 to 350 nm up to 800 K. For transient photoresponse at a pulse light excitation we found that Schottky diodes are superior to pn diodes with the same parameters
Keywords :
Schottky diodes; p-n junctions; photodiodes; semiconductor device models; semiconductor epitaxial layers; silicon compounds; transient response; ultraviolet detectors; wide band gap semiconductors; 250 to 350 nm; 300 to 800 K; 6H-SiC Schottky barrier diodes; 6H-SiC junction barrier diodes; SiC; SiC pn junction diodes; UV detection properties; epitaxial 6H-SiC diodes; high quantum efficiency; high responsivity; numerical MEDICI simulation; oxide ramp termination; planar edge termination; pulse light excitation; spectral range; transient photoresponse; Medical simulation; Numerical simulation; Optical sensors; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Substrates; Temperature sensors; Wet etching;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967480
