4H-SiC bipolar power diodes realized by ion implantation

Author

Lazar, M. ; Planson, D. ; Isoird, K. ; Locatelli, M.L. ; Raynaud, C. ; Chante, J.P.

Author_Institution

INSA, CNRS, Villeurbanne, France

Volume

2

fYear

2001

fDate

37165

Firstpage

349

Abstract

Physico-chemical and electrical investigations were carried out in 4H-SiC p-type layers created by aluminum ion implantation at room temperature and high temperature post-implantation annealing. Crystal recovery and dopant preservation after annealing are proved by RBS/C and SIMS measurements. Dopant activation is evaluate by sheet resistance measurements. These results were applied for high voltage bipolar diodes with JTE protection

Keywords

Rutherford backscattering; aluminium; ion implantation; power semiconductor diodes; recrystallisation annealing; secondary ion mass spectra; silicon compounds; wide band gap semiconductors; 4H-SiC:Al bipolar power diodes; JTE protection; RBS/C; SIMS; SiC:Al; crystal recovery; dopant activation; dopant preservation; high temperature post-implantation annealing; high voltage bipolar diodes; ion implantation; junction termination extension; recrystallization; sheet resistance; Aluminum; Annealing; Diodes; Electrical resistance measurement; Furnaces; Heating; Ion implantation; Silicon carbide; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967481

Filename

967481