• DocumentCode
    1933907
  • Title

    Rapid Annealing for Shallow Junction Formation

  • Author

    Michel, A.E.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    287
  • Lastpage
    290
  • Abstract
    The application of rapid thermal annealing (RTA) of ion implanted impurities for the formation of shallow junctions provides advantages of reducing dopant distribution while removing the lattice damage. The higher temperature processing also improves the electrical activity of the dopants. The physical mechanisms of the redistribution and activation of ion implanted impurities are complex and RTA provides a valuable tool for investigating the details.
  • Keywords
    Bipolar transistors; Boron; Implants; Impurities; Ion implantation; Lattices; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436418
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933907