High temperature gate drive circuits for silicon carbide switching devices

This paper examines various topologies for the gate-drive circuit for power semiconductors used in high-frequency high-temperature applications. Particular emphasis is placed on transformer-isolated topologies and their implementation using commercially available high-temperature components. Low temperature circuits are built and tested for all candidate configurations. One candidate topology was chosen and built in the high temperature form using commercially available high temperature parts and tested at temperatures up to 200°C.