New aspects of intrinsic gettering for CCD imagers

The influence of as-grown microdefects on the CCD-Imager parameters is observed. It´s shown that the defect structure of the initial silicon wafers defines directly both denuded zone/gettering zone formaition and Si/SiO2 interface behavior in MIS-structures under intrinsic gettering annealing. For the defect structure investigation the gamma-diffraction method was used side by side with some traditional methods.