Title :
Znse/gaas Heterostructure Bipolar Transistors: Design and Operation of a New II-VI/III-V Device Structure
Author :
Glaeser, A. ; Nahory, R. ; Tamargo, M. ; Merz, J.
Author_Institution :
Electrical and Computer Engineering, Department University of California
Keywords :
Bipolar transistors; Design engineering; Doping; Etching; Gallium arsenide; Gold; Heterojunction bipolar transistors; III-V semiconductor materials; Ohmic contacts; Zinc compounds;
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
DOI :
10.1109/DRC.1991.664727
