• DocumentCode
    1933928
  • Title

    Znse/gaas Heterostructure Bipolar Transistors: Design and Operation of a New II-VI/III-V Device Structure

  • Author

    Glaeser, A. ; Nahory, R. ; Tamargo, M. ; Merz, J.

  • Author_Institution
    Electrical and Computer Engineering, Department University of California
  • fYear
    1991
  • fDate
    17-19 June 1991
  • Keywords
    Bipolar transistors; Design engineering; Doping; Etching; Gallium arsenide; Gold; Heterojunction bipolar transistors; III-V semiconductor materials; Ohmic contacts; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1991. 49th Annual
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-87942-647-0
  • Type

    conf

  • DOI
    10.1109/DRC.1991.664727
  • Filename
    664727
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1933928