New radiation sensors based on SRO/Si junction

Author

Aceves, M. ; Malik, A. ; Carillo, J. ; AlcÁntara, S.

Author_Institution

Departamento de Electronica, Instituto Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico

Volume

2

fYear

2001

fDate

37165

Firstpage

359

Abstract

Silicon rich oxide (SRO), or off stoichiometry silicon oxide, has been studied from several perspectives. The SRO is a double phase material formed by silicon islands embedded in a SiO₂ matrix, whose final characteristics are related to the silicon excess. The silicon excess is determined by the gas precursor ratio, Ro. For Ro higher than 50 a stoichiometric oxide is obtained, while for Ro=3 the excess silicon is around 17%. SRO can also be obtained by silicon implantation into thermal silicon oxide. We have studied the electronic behavior of the Al/SRO/Si structure. With this knowledge, we have proposed new radiation sensors that use the SRO/Si junction. In this paper, we present some details and experimental results of such devices

Keywords

CVD coatings; MIS structures; ion implantation; p-i-n photodiodes; photodetectors; semiconductor-insulator boundaries; silicon; silicon compounds; stoichiometry; Al-SiO-Si; MOS structure; Si rich oxide; SiO₂ matrix; SiO_x/Si junction; double phase material; electronic behavior; gas precursor ratio; induced PIN photodiode; low pressure chemical vapor deposition; off stoichiometry silicon oxide; photodetector; radiation sensors; silicon implantation; silicon islands; Aluminum; Chemical vapor deposition; Electrodes; Fluid flow; Gases; Impurities; Leakage current; MOS capacitors; Radiation detectors; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2001. CAS 2001 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-6666-2

Type

conf

DOI

10.1109/SMICND.2001.967483

Filename

967483