Title :
New radiation sensors based on SRO/Si junction
Author :
Aceves, M. ; Malik, A. ; Carillo, J. ; AlcÁntara, S.
Author_Institution :
Departamento de Electronica, Instituto Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico
Abstract :
Silicon rich oxide (SRO), or off stoichiometry silicon oxide, has been studied from several perspectives. The SRO is a double phase material formed by silicon islands embedded in a SiO2 matrix, whose final characteristics are related to the silicon excess. The silicon excess is determined by the gas precursor ratio, Ro. For Ro higher than 50 a stoichiometric oxide is obtained, while for Ro=3 the excess silicon is around 17%. SRO can also be obtained by silicon implantation into thermal silicon oxide. We have studied the electronic behavior of the Al/SRO/Si structure. With this knowledge, we have proposed new radiation sensors that use the SRO/Si junction. In this paper, we present some details and experimental results of such devices
Keywords :
CVD coatings; MIS structures; ion implantation; p-i-n photodiodes; photodetectors; semiconductor-insulator boundaries; silicon; silicon compounds; stoichiometry; Al-SiO-Si; MOS structure; Si rich oxide; SiO2 matrix; SiOx/Si junction; double phase material; electronic behavior; gas precursor ratio; induced PIN photodiode; low pressure chemical vapor deposition; off stoichiometry silicon oxide; photodetector; radiation sensors; silicon implantation; silicon islands; Aluminum; Chemical vapor deposition; Electrodes; Fluid flow; Gases; Impurities; Leakage current; MOS capacitors; Radiation detectors; Silicon compounds;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967483
