DocumentCode
1933961
Title
Series resistance effects on EPROM programming
Author
Bez, R. ; Cantarelli, D. ; Cappelletti, P. ; Maurelli, A. ; Ravazzi, L.
Author_Institution
SGS-Thomson Microelectronics, 20041 Agrate MI, Italy
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
165
Lastpage
168
Abstract
An extensive characterization of the influence of series resistance on programming of 1.0¿m technology EPROM cells is presented. The different effects of series resistances on the source or on the drain have been pointed out. Furthermore a simple analytical model has been developed to simulate the influences on the programming.
Keywords
Analytical models; Capacitance measurement; Current measurement; EPROM; Electrical resistance measurement; Functional programming; Length measurement; Threshold voltage; Time measurement; Velocity measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436420
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