DocumentCode :
1933969
Title :
CMOS millimeter-wave layout-dependent parasitic parameters extraction and optimization by full-wave EM method
Author :
Zhong, Qian ; Yu, Yiming ; Kang, Kai
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2012
fDate :
18-20 Sept. 2012
Firstpage :
1
Lastpage :
4
Abstract :
This paper proposed a novel layout for cross-coupled pair to reduce its extrinsic resistive and capacitive parasitic parameters and another layout for differential pair to decrease the influence of Miller effect and some other parasitic effects. The equivalent circuits of the extrinsic parasitic network of these two structures are first derived and validated using EM simulation. The extraction equations of components in proposed parasitic network are also given.
Keywords :
equivalent circuits; feature extraction; field effect MIMIC; integrated circuit layout; CMOS millimeter-wave layout-dependent parasitic parameter extraction; EM simulation; Miller effect; capacitive parasitic parameters; cross-coupled pair; equivalent circuits; extrinsic parasitic network; full-wave EM method; parasitic effects; resistive parasitic parameters; Capacitance; Frequency measurement; Integrated circuit modeling; Layout; Logic gates; Mathematical model; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4673-0901-1
Electronic_ISBN :
978-1-4673-0903-5
Type :
conf
DOI :
10.1109/IMWS2.2012.6338196
Filename :
6338196
Link To Document :
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