DocumentCode
1934022
Title
Spin-valve structures for giant magnetoresistive sensor applications
Author
Avrarn, M. ; Angelescu, Anca ; Kleps, Kina ; Simion, Monica ; Miu, Mihaela
Author_Institution
Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania
Volume
2
fYear
2001
fDate
37165
Firstpage
371
Abstract
In this contribution we report and discuss that a different combination of Schottky barrier materials leads to a large increase of the transfer ratio between emitter and collector current, without increasing the input (emitter) current in a spin valve transistor structure. It will be shown that a different combination of Schottky barrier materials (for example replacing Si/metal ferromagnetic by porous silicon/metal ferromagnetic) leads to a large increase of the transfer ratio
Keywords
Schottky barriers; bipolar transistors; elemental semiconductors; giant magnetoresistance; magnetic sensors; porous semiconductors; silicon; spin valves; Schottky barrier material; Si; giant magnetoresistive sensor; porous silicon/ferromagnetic metal structure; spin valve transistor; transfer ratio; Electron emission; Giant magnetoresistance; Magnetic fields; Magnetic materials; Magnetic multilayers; Magnetic sensors; Optical scattering; Particle scattering; Schottky barriers; Valves;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-6666-2
Type
conf
DOI
10.1109/SMICND.2001.967486
Filename
967486
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