Title :
A designing roule for a pressure sensor with PZT layer
Author :
Ravariu, C. ; Ravariu, Florina ; Dobrescu, D. ; Dobrescu, Lidia ; Codreanu, Cecilia ; Avram, Marioara
Author_Institution :
Fac. of Electron. & Telecommun., Bucharest Univ., Romania
Abstract :
In the pressure sensors domain, the SOI structures bring some advantages: electrical insulation, high temperature sensors, an excellent etch stop layer (buried oxide), compatibility with microelectronic technology, lowering in thermal noise. The goal of this paper is to highlight a pressure sensor based on a coupling between piezoelectric effect in PZT and an Ψ-MOSFET. The analytical models, that will be presented, stand for a useful tool at a first iteration of the sensor designing
Keywords :
MOSFET; lead compounds; piezoelectric devices; pressure sensors; semiconductor device models; silicon-on-insulator; Ψ-MOSFET; PZT layer; SOI structure; Si-PZT; Si-PbZrO3TiO3; analytical model; buried oxide; design rule; electrical insulation; etch stop layer; high temperature sensor; microelectronic technology; piezoelectric effect; pressure sensor; thermal noise; Analytical models; Etching; Mechanical sensors; Piezoelectric films; Piezoelectric materials; Silicon; Temperature distribution; Temperature sensors; Tensile stress; Thermal sensors;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967488
