Electron velocity overshoot in sub-micron silicon MOS transistors

A l-D non-stationary hydrodynamic transport model is presented. Simulation results of n⁺-n-n⁺ drift devices using this model are compared with results using a Monte Carlo model, and it is shown that it is better not to include the heat flow in the model. Simulations of deep sub-micron NMOS transistors show velocity overshoot in the channel. These results are compared with experimental data and a good agreement is found.