• DocumentCode
    1934160
  • Title

    A 0.8 V low-power CMOS PTAT voltage reference

  • Author

    Zhu, Zhangming ; Yang, Yintang

  • Author_Institution
    Microelectron. Inst., Xidian Univ., Xi´´an, China
  • fYear
    2005
  • fDate
    28-30 May 2005
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The fundamental principles of the substrate bipolar transistor in CMOS technology and the bulk-driven MOSFET are discussed and analyzed. Based on the bulk-driven PMOSFET, substrate PNP transistor and current feedback technique an 0.8 V low power PTAT voltage reference is proposed for the temperature sensors applications. At a 0.8 V power supply with -25∼130 °C temperature range, the temperature coefficient of voltage reference is 0.926 mV/K, and the supply current is about 4.5 μV. When the power supply ranged 0.7 V∼1.0 V, the voltage reference is about 302 mV in the room temperature. The active area of reference is about 0.01 mm2.
  • Keywords
    CMOS integrated circuits; bipolar transistors; feedback; power MOSFET; temperature sensors; -25 to 130 degC; 0.7 to 1.0 V; bulk-driven MOSFET; feedback technique; low-power CMOS voltage reference; proportional-to-absolute-temperature; substrate PNP transistor; substrate bipolar transistor; temperature sensors applications; Bipolar transistors; CMOS technology; Charge carrier processes; Electron emission; Low voltage; MOSFET circuits; Temperature distribution; Temperature measurement; Temperature sensors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design and Video Technology, 2005. Proceedings of 2005 IEEE International Workshop on
  • Print_ISBN
    0-7803-9005-9
  • Type

    conf

  • DOI
    10.1109/IWVDVT.2005.1504449
  • Filename
    1504449