Title :
A fast method of parameter extraction for MOS transistors
Author :
Karlsson, P R ; Jeppson, K O
Author_Institution :
Dept of Solid State Electronics, Chalmers University of Technology, S-412 96 G?teborg, Sweden
Abstract :
A fast method of parameter extraction using a limited number of data points is developed for the SPICE level 3 MOS transistor model. Analytical expressions or numerical equations that converge fast are used to calculate the parameters and all interactions between parameters are taken into account. Proper selection of data points ensures physically reasonable values for most extracted parameters.
Keywords :
Algorithm design and analysis; Data mining; Differential equations; Intrusion detection; MOSFETs; Parameter extraction; SPICE; Solid modeling; Threshold voltage; Transistors;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
