DocumentCode
1934189
Title
Effect of substrate origin and annealing conditions on stability of electrical conductivity of SnO2 thin polycrystalline films
Author
Ivashchenko, Anatolii ; Kerner, Iacov ; Maronchuck, I.
Author_Institution
Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova
Volume
2
fYear
2001
fDate
37165
Firstpage
391
Abstract
The variation of electrical conductivity in SnO2 thin films induced by their annealing in air or vacuum the temperature range from 380 to 750°C is considered. Substrate origin as well as ambient atmosphere of annealing plays principal role in stability of film properties
Keywords
annealing; electrical conductivity; semiconductor materials; semiconductor thin films; substrates; thermal stability; tin compounds; 380 to 750 C; SnO2; SnO2 polycrystalline thin film; annealing; electrical conductivity; stability; substrate origin; Annealing; Atmosphere; Conductive films; Conductivity; Heat treatment; Semiconductor films; Stability; Substrates; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-6666-2
Type
conf
DOI
10.1109/SMICND.2001.967491
Filename
967491
Link To Document