Recrstalization of Silicon-on-Insulator Films by a Pseudoline Electron Beam

Recent-progress on the recrystallization of silicon-on-insulator (SOI) films by a pseudoline electron beam is reviewed. The pseudoline beam was produced by scanning a spot beam along a line faster than the thermal response time of the substrate. a order to obtain a large SOI region without sub-boundaries and voids, such recrystalization conditions as the scanning waveform to produce a psuedoline beam, the scanninig direciton and velocity of the pseudoline beam, the seed direction, and so on were optimized. A single crystal SOI area of 100 ¿ square was thus obtained.