• DocumentCode
    1934205
  • Title

    The application of selective electroless plating for microelectronics applications

  • Author

    NiDheasuna, C. ; Spalding, T. ; Mathewson, A.

  • Author_Institution
    Department of Chemistry University College Cork, Ireland
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    The feasibility of using electroless Nickel deposition for contact hole filling in Si VLSI technology has been demonstrated. The fundamentals of nickel plating are observed in the effects of such variables as temperature, nickel concentration and pH. Three types of electroless nickel solutions have been examined. In the first bath, the reducing agent was Nickel Hypophosphite, in the second, DMAB and in the third, Hydrazine. Pretreatment of the wafers involved immersing the wafers in an organic solvent. Surface topography and planarisation has been investigated by scanning electron microscopy (SEM) while the plating solution composition was investigated using nuclear magnetic resonance spectroscopy (NMR).
  • Keywords
    Filling; Microelectronics; Nickel; Nuclear magnetic resonance; Propellants; Scanning electron microscopy; Solvents; Surface topography; Temperature; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436431