DocumentCode
1934205
Title
The application of selective electroless plating for microelectronics applications
Author
NiDheasuna, C. ; Spalding, T. ; Mathewson, A.
Author_Institution
Department of Chemistry University College Cork, Ireland
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
129
Lastpage
132
Abstract
The feasibility of using electroless Nickel deposition for contact hole filling in Si VLSI technology has been demonstrated. The fundamentals of nickel plating are observed in the effects of such variables as temperature, nickel concentration and pH. Three types of electroless nickel solutions have been examined. In the first bath, the reducing agent was Nickel Hypophosphite, in the second, DMAB and in the third, Hydrazine. Pretreatment of the wafers involved immersing the wafers in an organic solvent. Surface topography and planarisation has been investigated by scanning electron microscopy (SEM) while the plating solution composition was investigated using nuclear magnetic resonance spectroscopy (NMR).
Keywords
Filling; Microelectronics; Nickel; Nuclear magnetic resonance; Propellants; Scanning electron microscopy; Solvents; Surface topography; Temperature; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436431
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