Title :
Low temperature bonding techniques for MEMS applications
Author :
Dunare, C. ; Stevenson, T. ; Gundlach, A. ; Walton, A. ; Parkes, W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Edinburgh Univ., UK
Abstract :
Direct bonding of two mirror-polished wafers, without any external applied energy and at low temperature, is an attractive technique for the new generation of ICs, due to the flexibility that the technique offers. This technique can be used for advanced CMOS applications and for MEMS ones, that are MOS compatible. The bonded structure can be obtained using wet or dry activation techniques. The aim of the paper is to provide a method that assures pairs of bonded wafers in case of using a normal thick wafer (~300 μm) and a thin one (less than 100 μm)
Keywords :
CMOS integrated circuits; integrated circuit bonding; micromechanical devices; wafer bonding; CMOS IC; MEMS; dry activation; low temperature wafer bonding; wet activation; Annealing; Cleaning; Micromechanical devices; Plasma applications; Plasma temperature; Pressing; Silicon; Surface contamination; Surface treatment; Wafer bonding;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967493
