Title :
Optimization of P Implanted Silicon Bolometers
Author :
Baciocco, E. ; Boragno, C. ; Valbusa, U. ; Bresolin, C. ; Pignatel, G.
Author_Institution :
Dipartimento di Fisica, Via Dodecaneso 33, 16146 Genova, Italy
Abstract :
We have measured electrical resistance R as function of temperature T in the range 2 % 20 K of severaL P implanted Silicon bolonmeters with the aim of optimize the characteristics of the bolometers. We have investigated the R(T) behavior of several samples obtaitned by varying implant conditions, depth profile and annealing.
Keywords :
Bolometers; Electric resistance; Electric variables measurement; Electrical resistance measurement; Extraterrestrial measurements; Physics; Silicon; Temperature dependence; Temperature distribution; Time measurement;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
