Simulation of arsenic and boron diffusion during rapid thermal annealing in Silicon

Rapid thermal annealing for boron was simulated by a recently developed pair diffusion model. Boron is assumed to reside on interstitial sites after implantation. Decay starts as the temperature rises due to the reaction BI B + I. Damage has been taken into account. The model accounts for the temperature dependencey of the transient diffusion effect. The fact that arsenic yields a much less pronounced transient effect is adressed and discussed in our theoretical framework.