Title :
Low-power ultra-wideband power detector IC in 130 nm CMOS technology
Author :
Yang, Xin ; Uchida, Yorikatsu ; Liu, Qing ; Yoshimasu, Toshihiko
Author_Institution :
Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan
Abstract :
This paper presents a low operation voltage ultra-wideband power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOS transistor differential pair with a resistive feedback. The power detector IC was designed and fabricated using TSMC 130 nm CMOS technology. The detector IC exhibits an operation frequency from 100 MHz to 40 GHz at an operation voltage of 0.6 to 1.2 V. The minimum detectable power is -16 dBm at 40 GHz with a dc power consumption of only 0.116 mW.
Keywords :
CMOS integrated circuits; MOSFET; field effect MIMIC; low-power electronics; TSMC CMOS technology; frequency 100 MHz to 40 GHz; low-power ultrawideband power detector IC; low-power ultrawideband power detector integrated circuit; microwave applications; millimeter-wave applications; nMOS transistor differential pair; power 0.116 mW; resistive feedback; size 130 nm; voltage 0.6 V to 1.2 V; CMOS integrated circuits; CMOS technology; Detectors; Logic gates; Power amplifiers; Radio frequency;
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4673-0901-1
Electronic_ISBN :
978-1-4673-0903-5
DOI :
10.1109/IMWS2.2012.6338206
