Title :
Circuit level models for VLSI components
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Abstract :
Physics-based, analytical device models intended for use in circuit simulation are the subject of this review. We discuss in turn the modelling of the MOSFET, the modelling of the bipolar transistor, and the acquisition, process dependence and statistics of parameters.
Keywords :
Analytical models; Circuit simulation; Laboratories; MOSFET circuits; Physics; Shape measurement; Solid modeling; Statistical analysis; Threshold voltage; Very large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
