DocumentCode
1934487
Title
A flash EEPROM cell scaling including tunnel oxide limitations
Author
Yoshikawa, Kuniyoshi ; Mori, Selichi ; Sakagami, Eiji ; Arai, Norihisa ; Kaneko, Yukio ; Ohshima, Yoichi
Author_Institution
Semiconductor Device Engineering Laboratory, Toshiba Corp., 1, Komukai-Toshiba, Saiwai-ku, Kawasaki 210, JAPAN
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
169
Lastpage
172
Abstract
A new flash EEPROM cell scaling scenario is proposed, which takes tunnel oxide thinning limitation into consideration. The derived scaling scenario, performance, and reliability are discussed, in comparison with EPROM scaling.
Keywords
Degradation; EPROM; Guidelines; Laboratories; Leakage current; Microelectronics; Reliability engineering; Semiconductor devices; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436443
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