Title :
Noise characterisation of silicon MOSFETs degraded by F-N injection
Author :
Nguyen-Duc, C. ; Ghibaudo, G. ; Balestra, F.
Author_Institution :
Laboratoire de Physique des Composants á Semiconducteurs, ENSERG, 23 rue des martyrs, B.P. 257, 38016 Grenoble France.
Abstract :
MOS transistors are investigated by low frequency noise measurements before and after Fowler-Nordheim (F-N) injection. The comparison with other techniques such as static I(V) characterisation and charge pumping method is also done in order to correlate the noise level to the MOSFET interface properties. The results are discussed in term of number and mobility fluctuations noise model.
Keywords :
Charge measurement; Current measurement; Degradation; Fluctuations; Low-frequency noise; MOSFETs; Noise level; Semiconductor device noise; Silicon; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
