Title :
Power devices for high voltage integrated circuits: new device and technology concepts
Author :
Amaratunga, Gehan ; Udrea, Florin
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
Power electronic devices and power integrated circuits will play a crucial role in increasing the efficiency with which electric power is consumed. This paper is concerned with recent trends in high voltage devices for integrated circuits and prospective industrial applications of high voltage power integrated circuits. New device concepts are explored in comparison with classical LDMOSFETs and LIGBTs. Alternative technologies to the conventional junction-isolation technology, such as high voltage SOI technology are also briefly analysed
Keywords :
insulated gate bipolar transistors; isolation technology; power MOSFET; power integrated circuits; power semiconductor devices; silicon-on-insulator; HV SOI technology; HV power ICs; LDMOSFET; LIGBT; RESURF junction devices; SOCOS LDMOS; Si; dielectric isolation IGBT; high voltage devices; high voltage integrated circuits; industrial applications; isolation technology; lateral IGBT; partial SOI; power electronic devices; power integrated circuits; ultra-thin SOI devices; Consumer electronics; Home appliances; Insulated gate bipolar transistors; Integrated circuit technology; Motor drives; Power generation; Power integrated circuits; Power systems; Rectifiers; Voltage;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967503
